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      SCOPUS KCI등재

      레이저 국소증착을 이용한 TFT-LCD 회로 수정용 미세 텅스텐 패턴 제조

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      다국어 초록 (Multilingual Abstract)

      This paper presents the results for deposition of micrometer-scale metal lines on glass for the development of TFT-LCD circuit repair-system. Although there had been a few studies in the late 1980’s for the deposition of metallic interconnects by la...

      This paper presents the results for deposition of micrometer-scale metal lines on glass for the development of TFT-LCD circuit repair-system. Although there had been a few studies in the late 1980’s for the deposition of metallic interconnects by laser-induced chemical vapor deposition, those studies mostly used continuous wave lasers. In this work, a third harmonic Nd:YLF laser (351㎚) of high repetition rates, up to 10 KHz, was used as the illumination source and W(CO)? was selected as the precursor. General characteristics of the metal deposit (tungsten) such as height, width, morphology as well as electrical properties were examined for various process conditions. Height of the deposited tungsten lines ranged from 35 to 500 ㎚ depending on laser power and scan speed while the width was controlled between 3∼50 ㎛ using a slit placed in the beam path. The resistivity of the deposited tungsten lines was measured to be below 1 Ωㆍ㎛, which is an acceptable value according to the manufacturing standard. The tungsten lines produced at high scan speed had good surface morphology with little particles around the patterns. Experimental results demonstrated that it is likely that the deposit forms through a hybrid process, namely through the combination of photolytic and pyrolytic mechanisms.

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      참고문헌 (Reference)

      1 Lai, "microstructure of as-deposited and annealed films" 370 : 114-121, 2000.

      2 Moilanen, "Utilisation of Cu tmvs precursor gas in LCVD integrated circuit repair system" 138 : 123-129, 1999.

      3 Gluck, "Mechanism of carbon and oxygen incorporation into thin metal films grown by laser photolysis of carbonyls" 61 (61): 998-1005, 1987.

      4 Black, "Low-Temperature laser deposition of tungsten by silane-and disilane-assisted reactions" 1072-1074, 1990.

      5 Baum,T. H.,Comita,P. B, "Laser-induced chemical vapor deposition of metals for microelectronics technology" 218 : 80-94, 1992.

      6 K, "Laser-assisted selective deposition of nickel patterns on porous silicon substrates" 178 : 93-97, 2001.

      7 Han, "Laser-assisted chemical vapor deposition to directly write three-dimensional microstructures J. Laser Applications" 16 (16): 2004.

      8 Meunier, "Laser induced deposition of tungsten and copper" 45 : pp.200-2071997.

      9 Allen,S. D.,Tringubo,A. B, "Laser chemical vapor deposition of selective area Fe and W films" 54 : 1641-1643, 1983.

      10 Buerle,D.,, "Laser Processing and Chemistry" Springer-Verlag 337-393, 1995.

      1 Lai, "microstructure of as-deposited and annealed films" 370 : 114-121, 2000.

      2 Moilanen, "Utilisation of Cu tmvs precursor gas in LCVD integrated circuit repair system" 138 : 123-129, 1999.

      3 Gluck, "Mechanism of carbon and oxygen incorporation into thin metal films grown by laser photolysis of carbonyls" 61 (61): 998-1005, 1987.

      4 Black, "Low-Temperature laser deposition of tungsten by silane-and disilane-assisted reactions" 1072-1074, 1990.

      5 Baum,T. H.,Comita,P. B, "Laser-induced chemical vapor deposition of metals for microelectronics technology" 218 : 80-94, 1992.

      6 K, "Laser-assisted selective deposition of nickel patterns on porous silicon substrates" 178 : 93-97, 2001.

      7 Han, "Laser-assisted chemical vapor deposition to directly write three-dimensional microstructures J. Laser Applications" 16 (16): 2004.

      8 Meunier, "Laser induced deposition of tungsten and copper" 45 : pp.200-2071997.

      9 Allen,S. D.,Tringubo,A. B, "Laser chemical vapor deposition of selective area Fe and W films" 54 : 1641-1643, 1983.

      10 Buerle,D.,, "Laser Processing and Chemistry" Springer-Verlag 337-393, 1995.

      11 Y, "High-speed laser direct writing of tungsten conductors from W" 56 : 2581-2583, 1990.

      12 Kim, "Growth characteristics of micro carbon structures fabricated by Laser-assisted Chemical Vapor Deposi ion" 19 :

      13 Williams, "Freeform Fabrication of Functional Microsolenoids" 232-237, 1999.

      14 Gilgen,H. H.,Cacouris,T.,Shaw,P. S.,Krchnavek,R. R, "Direct writing of metal conductors with near-uv light" 42 : 55-66, 1987.

      15 Bjorklund, "Containerless fabrication of tungsten single crystals suing laser CVD for field emission applications" 75 : 493-496, 2002.

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      학술지 이력

      학술지 이력
      연월일 이력구분 이력상세 등재구분
      2023 평가예정 해외DB학술지평가 신청대상 (해외등재 학술지 평가)
      2020-01-01 평가 등재학술지 유지 (해외등재 학술지 평가) KCI등재
      2013-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2010-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2008-06-23 학회명변경 영문명 : Korean Society Of Precision Engineering -> Korean Society for Precision Engineering KCI등재
      2008-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2006-07-07 학술지명변경 외국어명 : 미등록 -> Journal of the Korean Society for Precision Engineering KCI등재
      2006-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2004-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2001-01-01 평가 등재학술지 선정 (등재후보2차) KCI등재
      1998-07-01 평가 등재후보학술지 선정 (신규평가) KCI등재후보
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      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 0.26 0.26 0.26
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.24 0.22 0.449 0.12
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