<P>An electrostatic discharge (ESD) protection circuit with novel structure based on a silicon-controlled rectifier (SCR) is proposed for 5 V ESD protection of integrated circuits. The proposed ESD protection circuit has large current driving ca...
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https://www.riss.kr/link?id=A107735586
2016
-
SCOPUS,SCIE
학술저널
1554-1555(2쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>An electrostatic discharge (ESD) protection circuit with novel structure based on a silicon-controlled rectifier (SCR) is proposed for 5 V ESD protection of integrated circuits. The proposed ESD protection circuit has large current driving ca...
<P>An electrostatic discharge (ESD) protection circuit with novel structure based on a silicon-controlled rectifier (SCR) is proposed for 5 V ESD protection of integrated circuits. The proposed ESD protection circuit has large current driving capacity due to its low on-resistance and high ESD robustness in comparison with the conventional SCR-based ESD protection circuit. The conventional SCR-based ESD protection circuit and the proposed ESD protection circuit were fabricated using a 0.18 mu m bipolar CMOS-double diffused metal-oxide semiconductor transistor (DMOS) process, and their electrical characteristics and ESD robustness were comparatively analysed using transmission line pulse measurements.</P>
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