Molecular Beam Epitaxial Growth of InAs Quantum Dots on (100) InAlAs/InP Emitting at Near Infrared Wavelength

다국어 초록 (Multilingual Abstract)

InAs quantum dots (QDs) on In$_{0.52}$Al$_{0.48}$As layer lattice
matched to (100) InP substrates were grown by solid-source
molecular beam epitaxy. We performed a study on the structural and
optical properties of InAs QDs with 0.8 eV (1.55 $\mu$m) emission
by using transmission electron microscopy (TEM) and
photoluminescence (PL) spectroscopy. The TEM image showed clear
existence of the QDs. The PL showed $\sim$0.8 eV ($\sim$1.55
$\mu$m) emission from dislocation-free InAs QDs with height of
$\sim$3.6 nm and base width of $\sim$20 nm. Activation energies
obtained from temperature dependence of the integrated PL
intensity were also similar to the reported values, confirming the
formation of InAs QDs.