1 강이구, "대용량 전력변환용 초고전압 NPT IGBT 최적화 설계에 관한 연구" 한국전기전자재료학회 28 (28): 490-495, 2015
2 강이구, "다양한 게이트 구조에 따른 IGBT 소자의 전기적 특성 비교 분석 연구" 한국전기전자재료학회 29 (29): 681-684, 2016
3 Shin, H. K, "Trend of the Technological Developments in Power Divices" 30 (30): 4-10, 2016
4 "TCAD TSUPREM-4 Two-Dimensional process Simulation Program User Manual"
5 Mao, H. L, "Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-OffLoss" 10 (10): 815-, 2019
6 Kim, B. H, "Optimized Design of Multi-Zone Junction Termination Extension for High Voltage Power Devices (IGBTs)" 17 : 5606-5611, 2017
7 Choi, Y.-I, "Modeling Breakdown Voltages for Power Semiconductor Devices" 38 (38): 320-332, 1998
8 "IGBT Characteristics (HEXFET is a trademark of International Rectifier)"
1 강이구, "대용량 전력변환용 초고전압 NPT IGBT 최적화 설계에 관한 연구" 한국전기전자재료학회 28 (28): 490-495, 2015
2 강이구, "다양한 게이트 구조에 따른 IGBT 소자의 전기적 특성 비교 분석 연구" 한국전기전자재료학회 29 (29): 681-684, 2016
3 Shin, H. K, "Trend of the Technological Developments in Power Divices" 30 (30): 4-10, 2016
4 "TCAD TSUPREM-4 Two-Dimensional process Simulation Program User Manual"
5 Mao, H. L, "Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-OffLoss" 10 (10): 815-, 2019
6 Kim, B. H, "Optimized Design of Multi-Zone Junction Termination Extension for High Voltage Power Devices (IGBTs)" 17 : 5606-5611, 2017
7 Choi, Y.-I, "Modeling Breakdown Voltages for Power Semiconductor Devices" 38 (38): 320-332, 1998
8 "IGBT Characteristics (HEXFET is a trademark of International Rectifier)"