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      KCI등재 SCOPUS

      Experimental Investigation of the Photocapacitance Effect in Organic Heterojunction Devices

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      https://www.riss.kr/link?id=A107001847

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      다국어 초록 (Multilingual Abstract)

      Photocapacitance eff ect refers to a mechanism that the illumination of light gives rise to an alteration in the junction capacitance. We reported the photocapacitance eff ect in organic heterojunction devices with measurements on various fabricated l...

      Photocapacitance eff ect refers to a mechanism that the illumination of light gives rise to an alteration in the junction capacitance. We reported the photocapacitance eff ect in organic heterojunction devices with measurements on various fabricated layer stacks. According to the results, the photocapacitance eff ect was observed in those organic heterojunction devices constituting a pn junction, in which the illumination leads to increasing the device capacitance at low frequencies. Based on the results, we attributed this eff ect to charge traps so that the light could eff ectively reduce the trapping lifetime, leading to changing the junction capacitance at low frequencies.

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      참고문헌 (Reference)

      1 E. Kamieniecki, "Wavelength-modulated photocapacitance spectroscopy" 51 (51): 1863-1865, 1980

      2 L. Yang, "Thermally evaporated sio serving as gate dielectric in graphene fi eld-eff ect transistors" 64 (64): 1846-1850, 2017

      3 Y. L. Ho, "Spectrally selective photocapacitance modulation in plasmonic nanochannels for infrared imaging" 16 (16): 3094-3100, 2016

      4 T. Saxena, "Silicon-on-insulator photoimpedance sensor using capacitance dispersion" 63 (63): 3236-3240, 2016

      5 M. Sasaki, "Silicon Oxide Thin Films Prepared by Vacuum Evaporation and Sputtering Using Silicon Monoxide vol. 417" OP Publishing 012028-, 2013

      6 C. S. Sangeeth, "Photoimpedance characterization of polymer fi eld-eff ect transistor" 95 (95): 225-, 2009

      7 A. Bogusz, "Photocapacitive light sensor based on metal-ymno3-insulator-semiconductor structures" 108 (108): 052103-, 2016

      8 R. S. Crandall, "Photocapacitance of mobile carriers in hydrogenated amorphous silicon solar cells" 42 (42): 451-453, 1983

      9 C. Henry, "Photocapacitance in the study of nonradiative centers" 7 : 127-145, 1973

      10 M. Ershov, "Negative capacitance eff ect in semiconductor devices" 45 (45): 2196-2206, 1998

      1 E. Kamieniecki, "Wavelength-modulated photocapacitance spectroscopy" 51 (51): 1863-1865, 1980

      2 L. Yang, "Thermally evaporated sio serving as gate dielectric in graphene fi eld-eff ect transistors" 64 (64): 1846-1850, 2017

      3 Y. L. Ho, "Spectrally selective photocapacitance modulation in plasmonic nanochannels for infrared imaging" 16 (16): 3094-3100, 2016

      4 T. Saxena, "Silicon-on-insulator photoimpedance sensor using capacitance dispersion" 63 (63): 3236-3240, 2016

      5 M. Sasaki, "Silicon Oxide Thin Films Prepared by Vacuum Evaporation and Sputtering Using Silicon Monoxide vol. 417" OP Publishing 012028-, 2013

      6 C. S. Sangeeth, "Photoimpedance characterization of polymer fi eld-eff ect transistor" 95 (95): 225-, 2009

      7 A. Bogusz, "Photocapacitive light sensor based on metal-ymno3-insulator-semiconductor structures" 108 (108): 052103-, 2016

      8 R. S. Crandall, "Photocapacitance of mobile carriers in hydrogenated amorphous silicon solar cells" 42 (42): 451-453, 1983

      9 C. Henry, "Photocapacitance in the study of nonradiative centers" 7 : 127-145, 1973

      10 M. Ershov, "Negative capacitance eff ect in semiconductor devices" 45 (45): 2196-2206, 1998

      11 T. Hori, "Moo3 buff er layer eff ect on photovoltaic properties of interpenetrating heterojunction type organic solar cells" 518 (518): 522-525, 2009

      12 Sedghi, M, "Modeling, design and fabrication of organic and polymeric optical devices" 2018

      13 J. Lauwaert, "Modeling of capacitance transients of thin-fi lm solar cells : a valuable tool to gain information on perturbing layers or interfaces" 104 (104): 053502-, 2014

      14 K.S. Karimov, "Humidity and illumination organic semiconductor copper phthalocyanine sensor for environmental monitoring" 141 (141): 323-328, 2008

      15 V. Mikhelashvili, "Highly sensitive optically controlled tunable capacitor and photodetector based on a metal-insulator-semiconductor on silicon-oninsulator substrates" 117 (117): 044503-, 2015

      16 Y. Zheng, "Exploiting lateral current fl ow due to doped layers in semiconductor devices having crossbar electrodes" 65 : 82-90, 2019

      17 T. Tiedje, "Electron transport in hydrogenated amorphous silicon : drift mobility and junction capacitance" 2 (2): 301-318, 1980

      18 K. E. Lee, "Eff ect of molybdenum oxide electronic structure on organic photovoltaic device performance : an x-ray absorption spectroscopy study" 118 (118): 27735-27741, 2014

      19 T. Walter, "Determination of defect distributions from admittance measurements and application to cu (in, ga) se2 based heterojunctions" 80 (80): 4411-4420, 1996

      20 H. Kakiuchi, "Characterization of si and siox fi lms deposited in very high-frequency excited atmospheric-pressure plasma and their application to bottom-gate thin fi lm transistors" 212 (212): 1571-1577, 2015

      21 T. Saxena, "Cds based novel photo-impedance light sensor" 29 (29): 025002-, 2014

      22 S. Bandyopadhyay, "Capacitive infrared photodetector for room temperature operation" 102 (102): 103108-, 2013

      23 H. S. Pang, "Capacitance methodology for investigating defect states in energy gap of organic semiconductor" 65 : 275-299, 2018

      24 B. C. Paul, "A novel method of optical detection using a capacitive device" 46 (46): 324-328, 1999

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      학술지 이력

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      연월일 이력구분 이력상세 등재구분
      2023 평가예정 해외DB학술지평가 신청대상 (해외등재 학술지 평가)
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      2006-01-01 평가 등재학술지 선정 (등재후보2차) KCI등재
      2005-05-30 학회명변경 영문명 : 미등록 -> The Korean Institute of Electrical and Electronic Material Engineers KCI등재후보
      2005-05-30 학술지명변경 한글명 : Transactions on Electrical and Electroni -> Transactions on Electrical and Electronic Materials KCI등재후보
      2005-01-01 평가 등재후보 1차 PASS (등재후보1차) KCI등재후보
      2003-01-01 평가 등재후보학술지 선정 (신규평가) KCI등재후보
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      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 0.08 0.08 0.1
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.1 0.11 0.239 0.07
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