Optimization of an Amorphous In-Ga-Zn-Oxide Semiconductor for a Top-Gate Transparent Thin-Film Transistor

다국어 초록 (Multilingual Abstract)

We developed methods for a process optimization of amorphous In-Ga-Zn-oxide (IGZO, atomic
ratio of the IGZO target ◇ In : Ga : Zn = 1 : 1 : 1) for transparent thin-film transistors (TTFTs).
During the sputtering process, the ratio of oxygen to the total gas mixture could be chosen in
order to obtain better electronic properties, depending on both the RF power and the sputtering
pressure. The post-anneal treatment at 300℃ for 1 hour in an O2 ambient was the most suitable
condition for the interface between the IGZO channel and the Al2O3 gate insulator Finally, the
introduction of a first step (FS) during the deposition was very effective in improving the electronic
properties of the top-gate IGZO-TTFTs. Through these optimization methods, we achieved a field
effect mobility of 11.7 cm2/sV, a sub-threshold-swing of 0.36 and a drain current on-off ratio of ~108 in the top-gate IGZO-TTFT.

다국어 초록 (Multilingual Abstract)

We developed methods for a process optimization of amorphous In-Ga-Zn-oxide (IGZO, atomic
ratio of the IGZO target ◇ In : Ga : Zn = 1 : 1 : 1) for transparent thin-film transistors (TTFTs).
During the sputtering process, the ratio of oxygen to the total gas mixture could be chosen in
order to obtain better electronic properties, depending on both the RF power and the sputtering
pressure. The post-anneal treatment at 300℃ for 1 hour in an O2 ambient was the most suitable
condition for the interface between the IGZO channel and the Al2O3 gate insulator Finally, the
introduction of a first step (FS) during the deposition was very effective in improving the electronic
properties of the top-gate IGZO-TTFTs. Through these optimization methods, we achieved a field
effect mobility of 11.7 cm2/sV, a sub-threshold-swing of 0.36 and a drain current on-off ratio of ~108 in the top-gate IGZO-TTFT.

참고문헌 (Reference)

1 A. Suresh, 92 : 033502-, 2008

2 H. Hosono, 352 : 851-, 2006

3 W. S. Cheong, 2007

4 T. Iwasaki, 90 : 242114-, 2007

5 D. Hong, 515 : 2717-, 2006

6 D. Kang, 90 : 192101-, 2007

7 D. Hong, 23 : 25-, 2005

8 J. F. Wager, "Transparent Electronics" Springer 2008

9 N. F. Mott, "Electronic Processes in Non-Crystalline Materials" Clarendon 1979