광소자용 실리콘 옥사이드(Silicon oxide) 박막의 유전율 특성에 관한 연구 = A Study on the Dielectric Properties of Optical Element Silicon Mono-oxide Thin Film

다국어 초록 (Multilingual Abstract)

Silicon mono-oxide films deposited by vacumm evaporater. These film's refractive index, wave length, photon energy and absorption rate are examined by spectroscopic ellipsometer. The basic absorption and absorption of the impurities are found in the low wave length (below 450nm in this study). And refractive index and conductive absorption linearly increased at increasing wave length. The refractive index is increased by the form of exponetial function. The absorption rate is linearly increasing as the thickness of SiO film increasing. ε1 and ε2 decreased by the form of exponential function as the thickness of SiO film decreasing. And it is found that the results show good agreement with experimental and calculated datas.