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      One-Dimensional TiO<sub>2</sub>@Ag Nanoarchitectures with Interface-Mediated Implementation of Resistance-Switching Behavior in Polymer Nanocomposites

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      https://www.riss.kr/link?id=A107593779

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      <P>A nanocomposite capable of showing a resistance-switching behavior is prepared using novel resistance-switchable fillers embedded in a polymer matrix. The filler in this study employs a conformal passivation layer of highly crystalline TiO<SUB>2</SUB> on surfaces of conductive Ag nanowires to effectively gate electron flows delivered through the conductive core, resulting in an excellent resistance-switching performance. A nanocomposite prepared by controlled mixing of the resistance-switchable nanowires with a polymer matrix successfully exhibited a resistance-switching behavior of highly enhanced reliability and a resistance on/off ratio, along with flexibility due to the presence of nanowires of a tiny amount. The advantages of our approach include a simple and low-cost fabrication procedure along with sustainable performances suitable for a resistance-switching random-access-memory application.</P><P><B>Graphic Abstract</B>
      <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2012/aamick.2012.4.issue-11/am301362f/production/images/medium/am-2012-01362f_0005.gif'></P>
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      <P>A nanocomposite capable of showing a resistance-switching behavior is prepared using novel resistance-switchable fillers embedded in a polymer matrix. The filler in this study employs a conformal passivation layer of highly crystalline TiO<...

      <P>A nanocomposite capable of showing a resistance-switching behavior is prepared using novel resistance-switchable fillers embedded in a polymer matrix. The filler in this study employs a conformal passivation layer of highly crystalline TiO<SUB>2</SUB> on surfaces of conductive Ag nanowires to effectively gate electron flows delivered through the conductive core, resulting in an excellent resistance-switching performance. A nanocomposite prepared by controlled mixing of the resistance-switchable nanowires with a polymer matrix successfully exhibited a resistance-switching behavior of highly enhanced reliability and a resistance on/off ratio, along with flexibility due to the presence of nanowires of a tiny amount. The advantages of our approach include a simple and low-cost fabrication procedure along with sustainable performances suitable for a resistance-switching random-access-memory application.</P><P><B>Graphic Abstract</B>
      <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2012/aamick.2012.4.issue-11/am301362f/production/images/medium/am-2012-01362f_0005.gif'></P>

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