High Temperature Packaging of 50 ㎾ Three-Phase SiC Power Module

다국어 초록 (Multilingual Abstract)

Research on silicon carbide (SiC) power electronics has shown their advantages in high temperature and high efficiency applications. This paper presents a SiC JFET based, 200 ℃, 50 ㎾ three-phase inverter module and evaluates its electrical performance. With 1200 V, 100 A rating of the module, each switching element is composed of four paralleled SiC JFETs (1200 V/25 A each) and two anti-parallel SiC Shottky Barrier Diodes (SBDs). The substrate layout inside the module is designed to reduce package parasitics. Then, experimental static characteristics of the module are obtained over a wide range of temperature, and low on-state resistance is shown up to 200 ℃. A gate driver, with different turn-on, turn-off gate resistances and RCD network, is designed to optimize the switching performances. The module is verified to have low power loss, fast switching characteristics at 650 V dc bus voltage, 60 A drain current, in both simulation and experiments. Finally, switching time and losses, obtained from simulation and experiment, are compared.

목차 (Table of Contents)

• Abstract
• Ⅰ. INTRODUCTION
• Ⅱ. SIC JFET MODULE OVERVIEW
• Ⅲ. STATIC CHARACTERISTICS
• Ⅳ. SWITCHING CHARACTERISTICS
• Ⅴ. CONCLUSIONS
• REFERENCES