흑린 소자의 Weak Localization 영역에서 양자 수송

다국어 초록 (Multilingual Abstract)

We study the magneto-conductance and dephasing in a strongly localized regime in black phosphorus (BP) devices. The phase coherence length, l_φ obtained from the magneto-conductance follows a temperature dependence of T^(-1⁄3) in the strongly localized regime with k_F l_e<1 (〖ξ< l〗_φ) based on the Ioffe–Regel criterion. Here k_F, l_e and ξ are the Fermi wave vector, mean free path and localization length, respectively. The conductance behavior as a function of temperature confirms that the transport regime of our BP is in a variable range hopping regime, which results in the strongly localized regime.

목차 (Table of Contents)

• 1. 서 론 1
• 2. 이 론 6
• 2.1 Metal Insulator Transition (MIT) and Intermediate Regime 6
• 2.2 Mean Free Path (l_e) 12
• 2.3 Localization Length (ξ) and Phase Coherence Length (l_φ) 14
• 2.4 Comparisons between l_φ and ξ 16
• 3. 실 험 18
• 3.1 Device Structure 19
• 3.2 Fabrication Process 20
• 3.2.1 Process Flow 20
• 3.2.2 Coordinate Mark Process 24
• 3.2.3 Exfoliation Process 26
• 3.2.4 Electron-Beam Lithography Process 29
• 3.2.5 E-Beam Metallization Process 32
• 3.2.6 Lift-off Process 33
• 3.3 Measurement System 34
• 4. 결과 및 토의 37
• 4.1 Physical Properties 38
• 4.2 Mean Free Path (l_e) 40
• 4.3 Magnet-Conductance (σ) and Phase Coherence Length (l_φ) 40
• 4.4 Variable Range Hopping (VRH) Regime 45
• 4.5 Quantum Confinement Effect (QCE) at Interface between BP and SiO2 51
• 5. 결 론 53
• Reference 54
• Acknowledgement

참고문헌 (Reference)

1 김근수, "“2차원 반도체와 흑린의 연구 동향”", DOI: 10.3938/PhiT.25.039 ,“물리학과 첨단기술” JULY/AUGUST (2016), 2016