The Doping and Plasma Effects on Gas Sensing Properties of α-Fe₂O₃ Thin Film

다국어 초록 (Multilingual Abstract)

Pure and Sn or Pt doped $\alpha-Fe_2O_3$ thin films were prepared on $Al_2O_3$ substrates by RF-magnetron sputtering method and the sensitivities were compared. It was found that pure $\alpha-Fe_2O_3$ thin films did not exhibit much selectivity in CO and $i-C_4H_{10}$ gases while it showed the high sensitivity in proportion to the gas concentration of $C_2H_{5}OH$ gas. Pt-doped $\alpha-Fe_2O_3$ showed to be alike sensing properties as pure $\alpha-Fe_2O_3$ thin film in $C_2H_{5}OH$ gas. However, Sn-doped $\alpha-Fe_2O_3$ thin films exhibited the excellent sensitivity and selectivity in Hz gas. After microstructure modification by plasma etching on pure $\alpha-Fe_2O_3$ thin films, the gas sensing characteristics were dramatically changed.