The thermal stability of atomic layer deposited HfLaOx: Material and electrical characterization

다국어 초록 (Multilingual Abstract)

HfLaOx based Metaleoxideesemiconductor capacitors were fabricated by atomic layer deposition in this work. The material and electrical properties of the films along with the high temperature thermal treatment were investigated. It was found that samples undergoing annealing at 900 ℃ exhibited the best performance. The film was found to be crystallized to a cubic structure at 900 ℃, and the roughness of the films was estimated to be 0.332 nm. For electrical characterization, the C-V curve of the film is in good agreement with the corresponding simulated curve, and the capacitor does not show any hysteresis.
Moreover, the Dit near the center of silicon band gap exhibits lowest value, and it was calculated to be 2.28 × 1011 eV-1 cm-2.

다국어 초록 (Multilingual Abstract)

HfLaOx based Metaleoxideesemiconductor capacitors were fabricated by atomic layer deposition in this work. The material and electrical properties of the films along with the high temperature thermal treatment were investigated. It was found that samples undergoing annealing at 900 ℃ exhibited the best performance. The film was found to be crystallized to a cubic structure at 900 ℃, and the roughness of the films was estimated to be 0.332 nm. For electrical characterization, the C-V curve of the film is in good agreement with the corresponding simulated curve, and the capacitor does not show any hysteresis.
Moreover, the Dit near the center of silicon band gap exhibits lowest value, and it was calculated to be 2.28 × 1011 eV-1 cm-2.

참고문헌 (Reference)

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