Doping된 Ⅲ-Ⅴ族 化合物 半導體 界面에서 空間電荷效果 = Space Charge Effects at Doped Ⅲ-Ⅴ Compound Semiconductor Interfaces

국문 초록 (Abstract)

도핑된 半導體 界面의 界面電荷 近似式과 構造를 提案하였다. III-V族 化合物 半導體인 p-GaP,p-InP,n-GaAs와 T>$C_sNO_3$</TEXT> 水性 電解質 界面에서 整流現象은 循環電流-電壓特性으로 定性的 解析을 하였다. 半導體 界面의 電流-電壓 特性曲線, 이온 吸着과 電位障壁 過程은 連續循環電壓方法으로 實證하였다. 도핑된 半導體-電解質 界面에서 pn 또는 np 接合構造와 그에 따른 整流形은 空間電荷에 의하여 決定된다.

다국어 초록 (Multilingual Abstract)

Interfacil charge approximations and structures at doped semiconductor interfaces were proposed. Rectifying phenomena at the III-V compound semiconductor (p-GaP, p-InP, n-GaAs)/T>$CsNO_3$</TEXT> aqueous electrolyte interfaces were qualitatively analyzed in terms of their cyclic current-voltage characteristics. The current-voltage characteristic curves, the ion adsorption and potential barrier processes at the semiconductor interfaces were verified using continuous cyclic voltammetric methods. The pn or np junction structures and the related rectifying types at the doped semi-condudtor-electrolyte inferfaces are determined by the space charges.