<P><B>Abstract</B></P> <P>Negative capacitance (NC) phenomena is recently suggested as a breakthrough that can lead to the improved transistor by decreasing the subthreshold swing. To understand the NC phenomena, we inve...
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https://www.riss.kr/link?id=A107459055
2019
-
KCI등재,SCIE,SCOPUS
학술저널
347-350(4쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P><B>Abstract</B></P> <P>Negative capacitance (NC) phenomena is recently suggested as a breakthrough that can lead to the improved transistor by decreasing the subthreshold swing. To understand the NC phenomena, we inve...
<P><B>Abstract</B></P> <P>Negative capacitance (NC) phenomena is recently suggested as a breakthrough that can lead to the improved transistor by decreasing the subthreshold swing. To understand the NC phenomena, we investigated the effects of the ferroelectric properties such as the remnant polarization depending on the switching cycles in Si-doped HfO<SUB>2</SUB> thin film capacitor. The ferroelectric properties were controlled by using the wake-up effect, in which the remnant polarization enhances as the number of switching cycles increase. The relation between the wake-up effect and the voltage drop region with the negative differential capacitance were elucidated. The dynamic hysteresis loops were fitted based on Landau-Khalatnikov equation, and the free energy as a function of polarization was obtained. The Landau coefficients showed that the double-well feature of the free energy becomes more apparent due to the wake-up. Based on the wake-up effect on NC phenomena, we show that the NC phenomena is well described by Landau-Ginzburg theory of ferroelectrics.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Relation between negative capacitance and ferroelectric properties explained based on Landau theory. </LI> <LI> Wake-up effects explained based on Landau theory. </LI> <LI> Effective control of ferroelectric properties using wake-up effect. </LI> </UL> </P>
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