비정질 Ge<SUB>1 − x</SUB>Mn<SUB>x</SUB> 박막의 전기적, 자기적 특성에 미치는 열처리 효과

다국어 초록 (Multilingual Abstract)

Amorphous Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> semiconductor thin films grown by low temperature vapor deposition were annealed, and their electrical and magnetic properties have been studied. The amorphous thin films were 1,000~5,000 A thick. Amorphous Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> thin films were annealed at 300 ℃, 400 ℃, 500 ℃, 600 ℃ and 700 ℃ for 3 minutes in high vacuum chamber. X-ray diffraction analysis reveals that as-grown Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> semiconductor thin films are amorphous and are crystallized by annealing. Crystallization temperature of amorphous Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> semiconductor thin films varies with Mn concentration. Amorphous Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> thin films have p-type carriers and the carrier type is not changed during annealing, but the electrical resistivity increases with annealing temperature. Magnetization characteristics show that the as-grown amorphous Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> thin films are ferromagnetic and the Curie temperatures are around 130 K. Curie temperature and saturation magnetization of annealed Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> thin films increase with annealing temperature. Magnetization behavior and X-ray analysis implies that formation of ferromagnetic Ge3Mn5 phase causes the change of magnetic and electrical properties of annealed Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> thin films.