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Editorial Recent advances in power semiconductor devices
00 INSTITUTION OF ELECTRICAL ENGINEERS 2001 p.53-54
Modelling of self-protected light-triggered thyristors
Mawby, P. A. INSTITUTION OF ELECTRICAL ENGINEERS 2001 p.55-63
Design of single-gated multiple-mode power semiconductor devices
Stark, B. H. INSTITUTION OF ELECTRICAL ENGINEERS 2001 p.64-70
Trajkovic, T. INSTITUTION OF ELECTRICAL ENGINEERS 2001 p.71-74
Clustered insulated gate bipolar transistor: a new power semiconductor device
Sweet, M. INSTITUTION OF ELECTRICAL ENGINEERS 2001 p.75-78
Injection-enhancement effect in a novel, trench-planar insulated gate bipolar transistor
Spulber, O. INSTITUTION OF ELECTRICAL ENGINEERS 2001 p.79-84
Innovative low-cost power module
Hinchley, D. A. INSTITUTION OF ELECTRICAL ENGINEERS 2001 p.85-88
Electromechanical evaluation of a bondless pressure contact IGBT
Wakeman, F. J. INSTITUTION OF ELECTRICAL ENGINEERS 2001 p.89-94
Finite element modelling of thermal fatigue effects in IGBT modules
Shammas, N. Y. A. INSTITUTION OF ELECTRICAL ENGINEERS 2001 p.95-100