The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by grinding, lapping and polishing. The surfaces of sapphire wafe...
The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by grinding, lapping and polishing. The surfaces of sapphire wafers were mechanically affected by residual stress and surface default. This mechanical stress and strain can be cured by thermal annealing process. The sapphire crystalline wafers were annealed at 1100∼1400℃ and then characterized by double crystal X-ray diffraction. The sample showed good quality of crystalline wafer surface with full width at half maximum of 16 arcsec for the 4-hour heat-treatment at 1300℃.