High quality CuAlSe2(112)/GaAs(100) heteroepitaxial layers were grown by using the hot wall
epitaxy method. The optical absorption measurement showed the temperature dependence of the
energy band gap on the CuAlSe2 layer to be Eg(T) = 2.8382 eV . (8...
High quality CuAlSe2(112)/GaAs(100) heteroepitaxial layers were grown by using the hot wall
epitaxy method. The optical absorption measurement showed the temperature dependence of the
energy band gap on the CuAlSe2 layer to be Eg(T) = 2.8382 eV . (8.68 × 10.4 eV/K)T2/(155
+ T). After the as-grown CuAlSe2 layer was annealed in Cu, Se, and Al atmospheres, the origin
of point defects in the CuAlSe2 layer were investigated by using photoluminescence (PL) at 10 K.
Point defects originating from VCu, VSe, Cuint, and Seint were obtained from the PL measurements
and were classified as a donor or acceptor types. These PL results also led us to confirm that the
CuAlSe2 layer had obviously converted into an n-type after the Cu atmosphere treatment. Finally,
we found that the Al in the CuAlSe2 layer did not form native defects because the Al existed in
the form of stable bonds in the CuAlSe2 layer.or.