Crystal Structure of TiO₂ Thin Films grown on Sapphire Substrates by RF Sputtering as a Function of Temperature

다국어 초록 (Multilingual Abstract)

This study investigated the dependence of crystal structure on growth temperature in the TiO₂ thin films deposited on c-, a-, and r-plane sapphire substrates by reactive RF magnetron sputtering. Deposition of the films was carried out at temperatures ranging from 400°C to 700°C. X-ray diffraction patterns revealed that TiO₂with a rutile structure was epitaxially grown on substrates independent of substrate orientations. TiO₂thin films were grown with a dominant peak of (200) on c-plane sapphire, and their crystallization and crystal quality were improved with growth temperature. For the films formed on a-plane and r-plane sapphires, the preferential orientation was [101]. However, the intensities of the (101) peak were very weak and were not dependent on growth temperature. The TiO₂ thin films formed on the sapphire had a band gap of about 3.7 eV, which was larger than that of bulk (3.03 eV).

참고문헌 (Reference)

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