Tin oxide (SnO2) thin films were prepared on glass substrates by a Plasma Enhanced Chemical Vapor Deposition (PECVD)
method at different temperatures. The XRD data indicate that films are polycrystalline SnO2, which is in the tetragonal system
with ...
Tin oxide (SnO2) thin films were prepared on glass substrates by a Plasma Enhanced Chemical Vapor Deposition (PECVD)
method at different temperatures. The XRD data indicate that films are polycrystalline SnO2, which is in the tetragonal system
with a rutile-type structure. As the deposition temperature was increased, the texture plane of a film changed from the (200)
plane to denser (211) and (110) planes. SnO2 thin films prepared at 275 oC have a high resistivity of 1.07×10−1 Ω·cm and low
transmittance of 69.78%. On the other hand, SnO2 thin films deposited at 325~425 oC show an electrical resistivity of ~10−2
Ω·cm and a transmission coefficient between 80% and 85% in most of the visible spectrum. The properties of SnO2 films were
critically affected by the deposition temperature.