The substrate doping concentration dependence of strain-enhanced electron mobility in (110)/<110> nMOSFETs is investigated by using a self-consistent Schrodinger-Poisson solver. The electron mobility model includes Coulomb, phonon, and surface r...
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https://www.riss.kr/link?id=A100243736
2014
English
SCIE,SCOPUS,KCI등재
학술저널
518-524(7쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
The substrate doping concentration dependence of strain-enhanced electron mobility in (110)/<110> nMOSFETs is investigated by using a self-consistent Schrodinger-Poisson solver. The electron mobility model includes Coulomb, phonon, and surface r...
The substrate doping concentration dependence of strain-enhanced electron mobility in (110)/<110> nMOSFETs is investigated by using a self-consistent Schrodinger-Poisson solver. The electron mobility model includes Coulomb, phonon, and surface roughness scattering. The calculated results show that, in contrast to (100)/<110> case, the longitudinal tensile strain-induced electron mobility enhancement on the (110)/<110> can be increased at high substrate doping concentration.
목차 (Table of Contents)
Performance Optimization Study of FinFETs Considering Parasitic Capacitance and Resistance