<P>We report on transport measurement performed on a room-temperature-operating ultrasmall Coulomb blockade devices with a silicon island of sub5 nm. The charge stability at 300K exhibits a substantial change in slopes and diagonal size of each ...
http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
https://www.riss.kr/link?id=A107757501
2011
-
SCOPUS,SCIE
학술저널
1591-1597(7쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>We report on transport measurement performed on a room-temperature-operating ultrasmall Coulomb blockade devices with a silicon island of sub5 nm. The charge stability at 300K exhibits a substantial change in slopes and diagonal size of each ...
<P>We report on transport measurement performed on a room-temperature-operating ultrasmall Coulomb blockade devices with a silicon island of sub5 nm. The charge stability at 300K exhibits a substantial change in slopes and diagonal size of each successive Coulomb diamond, but remarkably its main feature persists even at low temperature down to 5.3K except for additional Coulomb peak splitting. This key feature of charge stability with additional fine structures of Coulomb peaks are successfully modeled by including the interplay between Coulomb interaction, valley splitting, and strong quantum confinement, which leads to several low-energy many-body excited states for each dot occupancy. These excited states become enhanced in the sub5 nm ultrasmall scale and persist even at 300K in the form of cluster, leading to the substantial modulation of charge stability.</P><P><B>Graphic Abstract</B>
<IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2011/nalefd.2011.11.issue-4/nl1044692/production/images/medium/nl-2010-044692_0008.gif'></P>
Ultrathin Planar Graphene Supercapacitors