<P>We report the largest-size thin films of uniform single-layer MoS<SUB>2</SUB> on sapphire substrates grown by chemical vapor deposition based on the reaction of gaseous MoO<SUB>3</SUB> and S evaporated from solid sourc...
http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
https://www.riss.kr/link?id=A107535718
2015
-
SCOPUS
학술저널
388
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>We report the largest-size thin films of uniform single-layer MoS<SUB>2</SUB> on sapphire substrates grown by chemical vapor deposition based on the reaction of gaseous MoO<SUB>3</SUB> and S evaporated from solid sourc...
<P>We report the largest-size thin films of uniform single-layer MoS<SUB>2</SUB> on sapphire substrates grown by chemical vapor deposition based on the reaction of gaseous MoO<SUB>3</SUB> and S evaporated from solid sources. The as-grown thin films of single-layer MoS<SUB>2</SUB> were continuous and uniform in thickness for more than 4 cm without the existence of triangular-shaped MoS<SUB>2</SUB> clusters. Compared to mechanically exfoliated crystals, the as-grown single-layer MoS<SUB>2</SUB> thin films possessed consistent chemical valence states and crystal structure along with strong photoluminescence emission and optical absorbance at high energy. These results demonstrate that it is possible to scale up the growth of uniform single-layer MoS<SUB>2</SUB> thin films, providing potentially important implications on realizing high-performance MoS<SUB>2</SUB> devices.</P><P><B>Electronic supplementary material</B></P><P>The online version of this article (doi:10.1186/s11671-015-1094-x) contains supplementary material, which is available to authorized users.</P>
Polarized Raman spectroscopy with differing angles of laser incidence on single-layer graphene