BaTiO3에서 SiO2 첨가에 의한 비정상 입성장과 단결정 성장 = Effect of SiO2 on Abnormal Grain Growth and Single Crystal Growth in BaTiO3

다국어 초록 (Multilingual Abstract)

A very small amount of SiO2 was locally added in sintered BaTiO3 ceramics and then heat-treated at 1350oC. In the region where SiO2 was not added, grain growth occurred very slowly. In the region where a very small amount of SiO2 was added, however, grain growth occurred very actively. After long time annealing at 1350oC, abnormal grains appeared only in the part where SiO2 was added and grew up to 2 cm in size. In the grown abnormal grains or single crystals, (111) double or single twins were not observed. The growth of abnormal grains or single crystals was explained by formation of liquid phase in the region where SiO2 was added. These results showed that centimeter-sized BaTiO3 single crystals without (111) double or single twins could be fabricated by using abnormal grain growth.

국문 초록 (Abstract)

BaTiO3 소결체에 국부적으로 SiO2를 첨가하고 열처리하여 비정상 입성장을 유도하였다. 열처리 중에 SiO2가 첨가되지 않은 부분에서는 BaTiO3 기지상 입자의 성장이 아주 느리게 일어났으나, SiO2가 첨가된 부분에서는 BaTiO3 기지상 입자가 빠르게 성장하였다. 장시간 열처리 후에는 SiO2가 첨가된 부분에서 비정상 입자가 생성되었고, 열처리 중에 연속적으로 성장하여 2 cm 크기 이상으로 성장하였다. 성장한 비정상 입자내부에는 (111) double twin 또는 single twin 등의 결함이 관찰되지 않아, 국부적으로 첨가된 SiO2에 의하여 생성된 액상에 의하여 비정상 입자와 단결정이 성장하였다. 이러한 결과는 BaTiO3 계에서 액상 분포의 불균일으로 비정상 입성장이 유도될 수 있으며, 또한 비정상 입성장을 이용하여 쌍정면 결함을 포함하지 않는 cm 크기의 BaTiO3 단결정을 제조할 수 있음을 보였다.

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