사점굽힘시험법을 이용한 이종절연막 (Si/SiO₂||Si₃N₄/Si) SOI 기판쌍의 접합강도 연구 = Direct Bonded (Si/SiO₂∥Si₃N₄/Si) SIO Wafer Pairs with Four-point Bending

다국어 초록 (Multilingual Abstract)

$2000{\AA}-SiO_2/Si(100)$ and $560{\AA}-Si_3N_4/Si(100)$ wafers, which are 10 cm in diameter, were directly bonded using a rapid thermal annealing method. We fixed the anneal time of 30 second and varied the anneal temperatures from 600 to $1200^{\circ}C$. The bond strength of bonded wafer pairs at given anneal temperature were evaluated by a razor blade crack opening method and a four-point bonding method, respectively. The results clearly slow that the four-point bending method is more suitable for evaluating the small bond strength of 80~430 mJ/$\m^2$ compared to the razor blade crack opening method, which shows no anneal temperature dependence in small bond strength.