Overview of GaN HEMT technology for high frequency applications

다국어 초록 (Multilingual Abstract)

GaN HEMT devices feature the advantages of high frequency, high efficiency, and high power density for power converters due to their excellent performances. At high frequencies, GaN is highly sensitive to parasitic parameters, which can lead to voltage and current overshoot, electromagnetic interference, additional power losses, and even device failure. These issues are very important for the power devices and the whole power conversion systems. However, there is a lack of a comprehensive and in-depth overview of GaN technology in high frequency applications. This paper focuses on the issues of driver circuit and power loop design, the parallel technology, the short-circuit protection technology, which is helpful for better use of GaN devices in high frequency applications.

목차 (Table of Contents)

• Abstract
• I. INTRODUCTION
• II. DRIVER CIRCUIT AND POWER LOOP DESIGN
• III. PARALLEL TECHNOLOGY OF GAN
• IV. SHORT CIRCUIT PROTECTION
• V. CONCLUSION
• REFERENCES