Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition

다국어 초록 (Multilingual Abstract)

<P>ZnO radial <I>p–n</I> junction architecture has the potential for forward-leap of light-emitting diode (LED) technology in terms of higher efficacy and economical production. We report on ZnO radial <I>p–n</I> junction-based light emitting diodes prepared by full metalorganic chemical vapour deposition (MOCVD) with hydrogen-assisted <I>p</I>-type doping approach. The <I>p</I>-type ZnO(P) thin films were prepared by MOCVD with the precursors of dimethylzinc, tert-butanol, and tertiarybutylphosphine. Controlling the precursor flow for dopant results in the systematic change of doping concentration, Hall mobility, and electrical conductivity. Moreover, the approach of hydrogen-assisted phosphorous doping in ZnO expands the understanding of doping behaviour in ZnO. Ultraviolet and visible electroluminescence of ZnO radial <I>p–n</I> junction was demonstrated through a combination of position-controlled nano/microwire and crystalline <I>p</I>-type ZnO(P) radial shell growth on the wires. The reported research opens a pathway of realisation of production-compatible ZnO <I>p–n</I> junction LEDs.</P>