Improving the Gas Barrier and Mechanical Properties of a-SiOx Films Synthesized at Low Temperature By Using High Energy and Hydrogen Flow Rate Control

다국어 초록 (Multilingual Abstract)

Silicon-oxide thin films were deposited on polyethylene-terephthalate (PET) and glass substrates for applications in transparent barrier packaging and replacement display cover glasses by using plasma-enhanced chemical vapor deposition (PECVD). The bias conditions and the input power in the radio-frequency plasma were changed to optimize the gas barrier and the mechanical properties of the silicon-oxide thin film. We made an advanced plasma source for large-area PECVD (370 × 470 mm2 size). The dissociation of the octamethylycyclodisiloxane (OMCTS) precursor was controlled by using the plasma processing parameters. The gas barrier and the mechanical properties of the a-SiOx film were improved by controlling the plasma process parameters. The gas barrier and the mechanical properties of the coatings were examined using a Permatran (MOCON) system and a pencil hardness measurement. The chemical structure properties of the coatings were examined by using Fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS). The properties of the a-SiOx thin films were improved by the dissociation of OMCTS obtained by using various appropriate plasma processing parameters.

참고문헌 (Reference)

1 N. Tomozeiu, 382 : 420-, 2002

2 Y. Sawada, 1661 : 28-, 1995

3 G. R. Nowling, 447 : 14-, 2005

4 K. Teshima, 583 : 169-, 2003

5 S. E. Babayan, 573 : 10-, 2001

6 Su B. Jin, 6763 : 519-, 2011

7 L. M. Han, 148 : 148-, 2001

8 Su B. Jin, S139 : 205-, 2010

9 C. Y. Wang, 1347 : 55-, 2001

10 Su B. Jin, 6334 : 519-, 2011

11 Su B. Jin, 6385 : 518-, 2010

12 Su B. Jin, 1107 : 11-, 2011

13 G. Socrates, "Infrared Characteristic Group Frequencies" Wiley