Two‑dimensional materials based on negative differential transconductance and negative differential resistance for the application of multi‑valued logic circuit: a review

다국어 초록 (Multilingual Abstract)

Devices with negative differential transconductance (NDT) and negative differential resistance (NDR) have shown a strong potential for digital electronics with high information density due to their N-shaped current–voltage (I–V) characteristics leading to multiple threshold voltages ( Vths). The 2D materials, such as graphene, hBN, MoS2, WS2, etc., offer an attractive platform to achieve NDT and NDR because of the absence of dangling bonds on the surface, leading to a high-quality interface between the layers. The 2D materials' unique property of the weak van der Waals (vdW) interactions without dangling bonds on the heterostructure devices shows the way for the applications more than-Moore devices. This review holds a well-timed overview of 2D materials-based devices to develop future multi-valued logic (MVL) circuits exhibiting high information density. Notably, the recent advances in emerging 2D materials are reviewed to support the directions for future research on MVL applications.

목차 (Table of Contents)

• Abstract
• 1 Introduction
• 2 Basics of?multi-valued logic (MVL)
• 3 Recent developments of?MVL with?2D materials
• 3.1 Negative differential resistance (NDR) and?negative differential transconductance (NDT)
• 3.2 Emerging structures with?2D materials
• 4 Conclusion and?perspective
• Acknowledgements
• References