Iterative identification of temperature dynamics in single wafer rapid thermal processing

다국어 초록 (Multilingual Abstract)

As the standard size of silicon wafers grows and performance specifications of integrated circuits become
more demanding, a better control system to improve the processing time, uniformity and repeatability in rapid thermal
processing (RTP) is needed. Identification and control are complicated because of nonlinearity, drift and the time-varying
nature of the wafer dynamics. Various physical models for RTP are available. For control system design they can be
approximated by diagonal nonlinear first order dynamics with multivariable static gains. However, these model structures
of RTP have not been exploited for identification and control. Here, an identification method that iteratively updates
the multivariable static gains is proposed. It simplifies the identification procedure and improves the accuracy of the
identified model, especially the static gains, whose accurate identification is very important for better control.

참고문헌 (Reference)

1 T. F. Edgar, 36 : 1567-, 2000

2 C. D. Schaper, 54 : 317-, 1992

3 S. A. Campbell, 4 : 14-, 1991

4 K. S. Lee, 40 : 1661-, 2001

5 M. Cho, 18 : 430-, 2005

6 J.Y. Choi, 16 : 621-, 2003

7 K. S. Balakrishnan, 365 : 322-, 2000

8 E. Dasssu, 30 : 686-, 2006

9 C. J. Huang, 36 : 705-, 2000

10 A. Kersch, 365 : 307-, 2000

11 S. J. Kim, 10 : 1199-, 2003

12 W. Cho, 47 : 4791-, 2008

13 J. Lee, 37 : 1018-, 1995

14 W. Cho, "Temperature control and modeling of the rapid thermal processing chamber" University of Texas at Austin 2005

15 이지태, "Closed-loop identification of wafer temperature dynamics in a rapid thermal process" 한국화학공학회 23 (23): 171-175, 2006

16 J.Y. Choi, "A leaning approach of wafer temperature control in a rapid thermal processing, system" 14 : 1-, 2001