Thermal annealing effect on nitrogen related defects of GaInNAs semiconductors

다국어 초록 (Multilingual Abstract)

Nitrogen related defects of GaInNAs epilayers grown by molecular beam epitaxy were investigated before and after rapid thermal annealing using X-ray photoelectron spectroscopy (XPS). XPS analysis revealed that the N-induced defect configurations are most likely attributed to the N-As spilt interstitials and (NAs-AsGa) complex. Comparison of as-grown and annealed samples showed that the nearest N-bonding configuration of GaInNAs changes from Ga3In1N to Ga1In3N after annealing, which can lead to reduction of the local strain. Annealed sample demonstrated a reduced the defect concentration, which could be due to the transformation of nearest N-bonding configuration after annealing.

참고문헌 (Reference)

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