Temperature Changes Caused by 13-MeV Proton Irradiation at the Interface of a Pyrex Glass and a Silicon Wafer

다국어 초록 (Multilingual Abstract)

Wafer-bonding techniques are key issues for the commercialization of microelectromechanical
system(MEMS) devices. We propose a new wafer-bonding method that uses localized heating of
the bonding interface at the Bragg peak of the proton beam. The energy absorbed in pyrex glass due
to the proton-beam irradiation was numerically calculated for various proton energies by using the
stopping and range of ions in matter(SRIM) program. 13-MeV proton beams were used to irradiate
the surface of pyrex glass mounted on a silicon wafer, and the interface temperature change was
measured as a function of the irradiation time at various beam currents. The pyrex glass and
the silicon wafer had the same sizes of 10 mm × 10 mm. The thicknesses of the pyrex glass and
the silicon wafer were 1 mm and 0.65 mm, respectively. At a fixed beam current, the interface
temperature change showed a rapid increase before 50 seconds and the increase became very slow
after 50 seconds. The final interface temperature was found to be determined by the proton beam
current, and the final temperature increased with the beam current.