동시 스퍼터링 방법으로 증착한 ZnO:Al의 전기적 광학적 특성 = Electrical and Optical Characteristics of ZnO:Al Deposited by Co-sputtering

다국어 초록 (Multilingual Abstract)

ZnO:Al thin films were grown on sodalime glass by RF magnetron co-sputtering. The RF power for ZnO target was fixed and DC power for Al target was controlled to adjust the Al contents in the films. As the DC power increased, the diffraction angle of XRD peak increased and the FWHM got smaller. The resistivity of the films decreased and the optical energy gap increased with increasing DC power. As the DC power increases, more Al atoms might be substituted with Zn atoms and the free electron density increases. With this increase in free electron density, the resistivity decrease and the optical energy gap increase can be explained. But above the specific DC power, namely above the specific Al contents, Al atoms might become interstitials and the quality of films gets worse (the FWHM of the XRD peak increases and the resistivity decreases).