SiO2 Film Formed by Inductivity Coupled Plasma Chemical Vapor Deposition at Low Temperature for Poly-Si TFT

다국어 초록 (Multilingual Abstract)

In this study, silicon dioxide (SiO2) lms were deposited at temperatures below 200C by using
the inductivity coupled plasma chemical vapor deposition (ICP CVD) technique. The breakdown
electric eld of as-deposited SiO2 lm by using this method shows values as high as 8.6 MV/cm.
Additionally the eects of post-metallization annealing on SiO2 were investigated. After 400C
annealing, the capacitance-voltage (C-V) characteristics such as
at-band voltage, and interface
trap density are improved considerably. In TFTs fabricated on single crystal SOI substrates at low
temperatures below 400C by using this gate dielectric, a sharp gate voltage swing of 85 mV/dec.
with high electron mobility was obtained. ICP CVD, by using high density plasma, can realize an
excellent SiO2 lm and is expected to be applicable for the gate oxide in high performance Si TFT
on plastic as well as on glass substrate.