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국문 초록 (Abstract)

고주파 마그네트론 스퍼터링으로 증착된 ～185 nm 두께의 ITO막을 습도 100%에서 열처리하였다. 온도 200 ℃, 250 ℃, 300 ℃, 350 ℃, 400 ℃ 및 450 ℃에서 각각 4시간 동안 열처리하였다. 고습 열처리에 따른 저항률, 전자농도 및 이동도 변화를 조사하였다. XRD결과로 스트레스 변화를 계산하였으며, FESEM 사진을 통해 ITO막의 표면형상을 관찰하였다. 광투과율을 측정한 후 에너지 밴드 갭을 구하였으며, Burnstein-Moss 효과와 비교 및 분석하였다.

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고주파 마그네트론 스퍼터링으로 증착된 ～185 nm 두께의 ITO막을 습도 100%에서 열처리하였다. 온도 200 ℃, 250 ℃, 300 ℃, 350 ℃, 400 ℃ 및 450 ℃에서 각각 4시간 동안 열처리하였다. 고습 열처리...

다국어 초록 (Multilingual Abstract)

The ～185 nm thick ITO films deposited by high frequency magnetron sputtering were annealed at 100% humidity. Annealing was performed at 200°C, 250°C, 300°C, 350°C, 400°C and 450°C for 4 hours, respectively. Variations in resistivity, electron concentration, and mobility by high-humidity annealing were investigated. The stress change was estimated from the XRD results, and the surface morphology of films was observed through the FESEM micrographs. After measuring the light transmittance, the energy-band-gap was obtained and analyzed with the Burnstein-Moss effect.

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목차 (Table of Contents)

Abstract
요약
Ⅰ. 서론
Ⅱ. 실험
Ⅲ. 결과 및 고찰

Abstract
요약
Ⅰ. 서론
Ⅱ. 실험
Ⅲ. 결과 및 고찰
Ⅳ. 결론
References

참고문헌 (Reference)

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