<P>The photodegeneration of polymer solar cells (PSCs) based on polymer donors and fullerene acceptors limits their lifetime and reliability. Here, we demonstrate that replacing fullerene acceptors with naphthalenediimide (NDI)-based n-type poly...
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https://www.riss.kr/link?id=A107429875
2017
-
SCOPUS,SCIE
학술저널
22170-22179(10쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>The photodegeneration of polymer solar cells (PSCs) based on polymer donors and fullerene acceptors limits their lifetime and reliability. Here, we demonstrate that replacing fullerene acceptors with naphthalenediimide (NDI)-based n-type poly...
<P>The photodegeneration of polymer solar cells (PSCs) based on polymer donors and fullerene acceptors limits their lifetime and reliability. Here, we demonstrate that replacing fullerene acceptors with naphthalenediimide (NDI)-based n-type polymers can significantly enhance the photo-stability of PSCs. As a model system, we compared the photo-stabilities of all-polymer solar cells (all-PSCs) and fullerene-based PSCs (fullerene-PSCs) using the same polymer donor (PBDTTTPD) exposed to one sunlight illumination. We observed a remarkable contrast in their photo-stabilities. After 4 days of irradiation, the performance of the fullerene-PSCs dropped by 50%, whereas the performance of the all-PSCs remained stable. The detailed analysis of charge dynamics measured by femtosecond transient absorption spectroscopy and space charge limited current measurements shows significant reduction in interfacial charge transfer and charge carrier mobility, which correlates with the loss in<I>J</I>SCand FF of the fullerene-PSCs under solar illumination. By contrast, for the all-PSCs, the ultrafast dynamics and charge mobility remained consistent after illumination. The NDI-based copolymer had high stability under light exposure, whereas the photo-induced dimerization of phenyl-C61-butyric acid methyl ester (PCBM) acceptors was responsible for the photo-degradation of fullerene-PSCs.</P>
Electronic structure and photocatalytic band offset of few-layer GeP2