Monolithic two‐terminal III‐V on Si dual‐junction solar cells, designed for low concentration applications, were fabricated by means of surface‐activated direct wafer bonding. The III‐V top cell is a heterojunction formed by an n‐Ga0.5In0....
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https://www.riss.kr/link?id=O119840940
2019년
-
1062-7995
1099-159X
SCI;SCIE;SCOPUS
학술저널
652-661 [※수록면이 p5 이하이면, Review, Columns, Editor's Note, Abstract 등일 경우가 있습니다.]
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
Monolithic two‐terminal III‐V on Si dual‐junction solar cells, designed for low concentration applications, were fabricated by means of surface‐activated direct wafer bonding. The III‐V top cell is a heterojunction formed by an n‐Ga0.5In0....
Monolithic two‐terminal III‐V on Si dual‐junction solar cells, designed for low concentration applications, were fabricated by means of surface‐activated direct wafer bonding. The III‐V top cell is a heterojunction formed by an n‐Ga0.5In0.5P emitter and a p‐Al0.2Ga0.8As base. An efficiency of 21.1 ± 1.5% at one sun and 23.7 ± 1.7% at 10 suns is demonstrated, which to our knowledge is the best dual‐junction two‐terminal III‐V on Si tandem cell efficiency reported to date under verified reference conditions. The I‐V characterization of these 1‐cm2 tandem cells under concentration required the development of a new method using a single‐source multiflash solar simulator and not perfectly matched component cells, also known as pseudo‐isotypes, formed by Si single‐junction cells and optical filters. In addition, the spectrum of the pulsed solar simulator was measured using a high‐speed CMOS spectrometer, allowing the calculation of the spectral mismatch correction factor. Merging these two techniques results in the hybrid corrected pseudo‐isotype (HCPI) characterization method, which shows a fast and accurate performance with a simplified procedure based on a single‐source solar simulator. Pseudo‐isotypes are easily adaptable to new cell designs by simply using a different filter, hence allowing the characterization of new multijunction solar cell architectures.
Monolithic two‐terminal (2 T) III‐V on Si dual‐junction (2 J) solar cells, designed for low concentration applications, were fabricated by means of surface‐activated bonding (SAB). An efficiency of 21.1 ± 1.5% at one sun and 23.7 ± 1.7% at 10 suns is demonstrated, which is the best 2 J 2 T III‐V on Si tandem cell efficiency reported to date under verified reference conditions. The I‐V characterization required the development of a new method using a single‐source multiflash solar simulator and not perfectly matched component cells, also known as pseudo‐isotypes.
Solar cell efficiency tables (version 54)