In this paper, we propose an ESD protection device with higher holding voltage characteristics than existing ESD protection devices. The proposed ESD protection device increases the holding voltage by operating an additional parasitic NPN bipolar tran...
In this paper, we propose an ESD protection device with higher holding voltage characteristics than existing ESD protection devices. The proposed ESD protection device increases the holding voltage by operating an additional parasitic NPN bipolar transistor. As a result, it was confirmed that the proposed ESD protection device has a holding voltage of 5.9V. In addition, it is expected that through Stack technology, it will be possible to design ESD protection devices corresponding to the voltages required by various applications.