We present a physical modeling for the transient program operation of barrier engineered charge-trapping NAND flash memory. Unlike existing models, we calculated the threshold voltage shift caused by each trapping layer by considering electron trappin...
We present a physical modeling for the transient program operation of barrier engineered charge-trapping NAND flash memory. Unlike existing models, we calculated the threshold voltage shift caused by each trapping layer by considering electron trapping in the ONO tunneling layer. We verified the rationality of our model through various parameter analyses.