Using Cr2O3 thin film, we developed a novel
etch-stop technique for the protection of silicon su rface
morphology during deep ion coupled plasma etching of silica
layers. With this technique we were able to etch a silica trench
with a depth of over 20...
Using Cr2O3 thin film, we developed a novel
etch-stop technique for the protection of silicon su rface
morphology during deep ion coupled plasma etching of silica
layers. With this technique we were able to etch a silica trench
with a depth of over 20 μm without any damage to the exposed
silicon terrace surface. This technique should be well
applicable to fabricating silica planar lighwave circuit
platforms for opto-electronic hybrid integration.