Comment on "Current crowding in GaN/InGaN light emitting diodes on insulating substrates" : J.Appl.Phys., 90,4191(2001) = “절연기판 상의 GaN/InGaN LED에서의 전류밀집현상”[J.Appl.Phys., 90,4191(2001)]에 대한 논평

다국어 초록 (Multilingual Abstract)

In a recent letter, X. Guo and E. F. Schubert [J. Appl. Phys., 90, 4191 (2001)] analyzed a current-crowding effect both theoretically and experimentally for p-side-up mesa structure GaN/InGaN LEDs. In the theoretical analysis they assumed that the voltage drop across the p-type series resistance R_v is much larger than kT/e. The point of the present comment is that the assumption should be modified as the voltage drop across the p-type series resistance R_v is much larger than [kT/e]exp(-eV_j/kT). In addition, the exact current spreading length L_s without any assumptions has been obtained in this comment.