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https://www.riss.kr/link?id=O138203325
1984년
eng
2166-2746
2166-2754
SCIE
학술저널
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
256-258 [※수록면이 p5 이하이면, Review, Columns, Editor's Note, Abstract 등일 경우가 있습니다.]
0
상세조회0
다운로드
A high resolution EELS study of free‐carrier variations in H+2/H+ bombarded (100)GaAs
Screening energy variations in silicon, silicon dioxide, and silicides
Charge control model of inverted GaAs–AlGaAs modulation doped FET’s (IMODFET’s)
Enhanced luminescence from AlGaAs/GaAs single quantum well structures through improved interfaces