1 M. Copel, 63 : 632-, 1989
2 B. Voigtlander, 51 : 7583-, 1995
3 D. Vanderbilt, 41 : 7829-, 1990
4 G. K. Kresse, 54 : 11169-, 1996
5 G. K. Kresse, 47 : 558-, 1993
6 H. Jeong, 73 : 125343-, 2006
7 K. Schroeder, 88 : 046101-, 2002
8 M. Horn-von Hoegen, 76 : 2953-, 1996
9 A. Sakai, 64 : 52-, 1994
10 K. Kajiyama, 222 : 38-, 1989
1 M. Copel, 63 : 632-, 1989
2 B. Voigtlander, 51 : 7583-, 1995
3 D. Vanderbilt, 41 : 7829-, 1990
4 G. K. Kresse, 54 : 11169-, 1996
5 G. K. Kresse, 47 : 558-, 1993
6 H. Jeong, 73 : 125343-, 2006
7 K. Schroeder, 88 : 046101-, 2002
8 M. Horn-von Hoegen, 76 : 2953-, 1996
9 A. Sakai, 64 : 52-, 1994
10 K. Kajiyama, 222 : 38-, 1989
11 M. Copel, 58 : 2648-, 1991
12 H. Hirayama, 60 : 14260-, 1999
13 J. M. Zuo, 88 : 255502-, 2002
14 J. M. Zuo, 520 : 7-, 2002
15 K. Oura, 35 : 1-, 1999
16 K. Fukutani, 59 : 13020-, 1999
17 S. Jeong, 79 : 4425-, 1997
18 S. Jeong, 58 : 12958-, 1998
19 S. Jeong, 81 : 5366-, 1998
20 S. Jeong, 530 : 155-, 2003
21 H. Jeong, 71 : 035310-, 2005
22 "Though Sc (4s23d1) has only one electron in the 3d state, it is strongly adsorbed on the H/Si(111) surface, which is expressed by creation of an unpaired electron by electron transition for 4s ! 3d in adsorption, i.e., 4s23d1 ! 4s13d2. The calculated energy di erence between the 4s and the 3d orbitals is only 0.7 eV, which means that the transition can easily occur in adsorption"
23 "The binding energy of Cl-H is larger than that of Si-H by 0.82 eV"
24 정호진, "In-Induced Variation in the Electronic Structure of In/Si(001)4 X 3 Nanoclusters" 한국물리학회 48 (48): 98-102, 2006
25 J. P. Perdew, "Electronic Structure of Solids '91" Academie Verlag 1991
26 Sukmin Jeong, "Dissociation of NO on Si(001) and Incorporation of N into the Subsurface" 한국물리학회 51 (51): 1962-1967, 2007