<P>Intensive attention has been currently focused on the discovery of semiconductor and proficient cocatalysts for eventual applications to the photoelectrochemical water splitting system. A W-Mo-doped BiVO4semiconductor was prepared by the surf...
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https://www.riss.kr/link?id=A107605054
2016
-
SCOPUS
학술저널
1-7(7쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>Intensive attention has been currently focused on the discovery of semiconductor and proficient cocatalysts for eventual applications to the photoelectrochemical water splitting system. A W-Mo-doped BiVO4semiconductor was prepared by the surf...
<P>Intensive attention has been currently focused on the discovery of semiconductor and proficient cocatalysts for eventual applications to the photoelectrochemical water splitting system. A W-Mo-doped BiVO4semiconductor was prepared by the surfactant-assisted thermal decomposition method on a fluorine-doped tin oxide conductive film. The W-Mo-doped BiVO4films showed a porous morphology with the grain sizes of about 270 nm. Because the hole diffusion length of BiVO4is about 100 nm, the W-Mo-doped BiVO4film in this study is an ideal candidate for the photoelectrochemical water oxidation. Iron oxyhydroxide (FeOOH) electrocatalyst was chemically deposited on the W-Mo-doped BiVO4to investigate the effect of the electrocatalyst on the semiconductor. The W-Mo-doped BiVO4/FeOOH composite electrode showed enhanced activity compared to the pristine W-Mo-doped BiVO4electrode for water oxidation reaction. The chemical deposition is a promising method for the deposition of FeOOH on semiconductor.</P>
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