고체상 에피택시에 의한 β-FeSi_2 박막의 에피택시 성장과 전자구조의 연구 = A Study on the Epitaxial Growth and Electronic Structures of β-FeSi_2 Thin Film by Solid Phase Epitaxy

다국어 초록 (Multilingual Abstract)

β-FeSi_2 was grown on a Si(100) substrate by thermally annealing using SPE from the sandwich structure. Fe(500Å)/Ti(SOÅ)/Si(100) sample. The peak for the β-FeSi_2(244) plane was observed at about 70.8˚ on the XRD spectrum and it was confirmed that the growth mode of Fe-silicide is β-FeSi_2(220)//Si(100) from HRTEM images. The electronic structures of the β-FeSi_2 thin film were investigated by AES and the Fe LMM Auger peaks of Fe-silicide were shifted toward higher energy with about 1∼3 eV with respect to those from bulk Fe. The each spectral terms of bulk Fe and β-FeSi_2 Auger peaks, which consisted of L_3M_23M_23, L_3M_23M_45 and L_3M_45M_45 Auger emissions, were deconvoluted in terms of L-S coupling. The plasmon energy loss peaks for the β-FeSi_2 were observed at about 20.8 and 19.0 eV lower than the principal Auger peaks, L_3M_23M_45 and L_3M_45M_45. The effective mass of the electron in β-FeSi_2 deduced from the plasmon energy loss was estimated to be about 0.4∼0.6 m_e.