This thesis is about the interface engineering in order to improve the device stability for highly efficient phosphorescent organic light-emitting diodes (PHOEDs). Notably, this thesis investigated that used the new methodology, which includes studies...
This thesis is about the interface engineering in order to improve the device stability for highly efficient phosphorescent organic light-emitting diodes (PHOEDs). Notably, this thesis investigated that used the new methodology, which includes studies on four types of the new synthetic bipolar transport materials for blue and green PHOLEDs, carrier injection and transport behaviors for ideal charge balance into emitting layer (EML) in solution-processed PHOLEDs, interface tunneling layer (ITL) for reduction of accumulated charge carrier both sides of EML, and an alternative current OLEDs (AC OLEDs) for utilization of new device structure operating in an AC condition.
In the case of the bipolar host materials, the new synthetic host materials were introduced for highly efficient PHOLEDs. Especially, the newly synthesized bipolar host materials showed the ideal charge balance factor, improved thermal and electrical properties, and enhanced device performance. However, the ideal charge balance factor does not give ideal device characteristics for green PHOLEDs, which might be due to a leakage current path caused by high current flow behavior, resulted from the geometry issue each material. Therefore, it necessary to find the critical interface that affects that the device performances and to do precise interface engineering.
Especially, the recombination zone (RZ) for solution-processed OLEDs can be easily formed towards the hole transport layer (HTL)/EML interface due to the restricted hole mobility of cross-linkable material. Such critical interface (i.e., HTL/ EML) can significantly influence the device performance and lifetime. Thus, we focused on the critical interface engineering for solution-processed OLEDs by controlling each carrier injection and transport behavior. Especially, to improve the hole mobility, we developed a new HTL having a polymer blending effect which or that gives a semi-interpenetrating polymer network (semi-IPN) structure. With this approach, we obtained highly efficient and improved device lifetime in solution-processed green PHOLEDs. Furthermore, we utilized the new synthetic electron transporting material (ETM, 4-(3-(fluoranthen-3-yl)-5-(fluoranthen-4-yl)phenyl)-2-phenyl-benzo[h]quinolone, FRT-PBQ) that observed lower electron mobility than a common ETM [e.g., 2,2’,2’’-(1,3,5-phenylene)tris(1-phenyl-1H-benzimidazole) (TPBI)], due to the increased twisted angle. Interestingly, FRT-PBQ showed high current efficacy and extended device lifetime as compared to that of the device fabricated with TPBI, which might be due to an overall moderately charge balance with a low hole mobility of cross-linkable HTL. From this result, we concluded that the moderate charge balance is required for highly efficient solution-processed OLEDs via the proper interface engineering.
Furthermore, the research on ITL is the interface modification by using very thin interface tunneling material. It could be acted as a protection layer of the critical interface, resulting in reduced accumulated charge carriers both sides of EML. Especially, it affects charge injection property, which helps to release the charge accumulation at the interface. This unique material could form the shift RZ to a center of EML to lower the possibility of exciton quenching acting as a non-radiative transition. Finally, ITL was applied to both sides of EML and showed significantly improved device lifetime (by a factor 2.5) compared to that obtained from the reference device.
Finally, in work for AC OLEDs, new device structure was proposed for improvement of the device stability. By introducing a two dimensional structure composed of two OLED devices, we could be driven individually and simultaneously according to the polarity of each electrode. It could be very beneficial to improve the accumulated charge carrier at the critical interface because it plays the very same role of the effect for reverse bias effect. From the repetition for the relaxation and accumulation process, the degradation originated from the interfacial charge accumulation could be easily released.