This paper represents the characteristic analyses for the etching in SF? plasma and the plasma itself, based on the specific knowledges on the discharge mechanism of SF? plasma which is widely used for the applications of dry etching, using Radio Fr...
This paper represents the characteristic analyses for the etching in SF? plasma and the plasma itself, based on the specific knowledges on the discharge mechanism of SF? plasma which is widely used for the applications of dry etching, using Radio Frequency Inductively Coupled Plasma(RFICP) by measuring electron density, electron temperature then observing their relationship to find the effect of discharge mechanism of SF? plasma to the etching in contrast to the existing method of finding optimal discharge condition by heuristic.