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https://www.riss.kr/link?id=O42135336
2004년
eng
0255-5476
1662-9752
SCOPUS
학술저널
MATERIALS SCIENCE FORUM
617-620 [※수록면이 p5 이하이면, Review, Columns, Editor's Note, Abstract 등일 경우가 있습니다.]
0878499431
International Conference on Silicon Carbide and Related Materials; ICSCRM2003
10th
Lyon, France
2003; Oct
0
상세조회0
다운로드
Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation
Extraction of the Schottky Barrier Height for Ti/Al Contacts on 4H-SiC from I-V and C-V Measurements
Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature
Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments