Effect of inserting Al₂O₃ layer using atomic layer deposition for quantum-dot light-emitting diodes = Effect of inserting Al₂O₃ layer using atomic layer deposition for quantum-dot light-emitting diodes

다국어 초록 (Multilingual Abstract)

We tested the Al₂O₃ layer deposited by atomic layer deposition (ALD) using O₂ * plasma to insulating & electron blocking layer for charge balance in quantum-dot (QD) light-emitting diodes (QLEDs). On the one hand, the O₂ * plasma can reduce the oxygen vacancy of ZnO so that can decrease the exciton quenching phenomenon. It led to excellent device performance and maximum luminance was 56,108 cd/㎡, when 1nm Al₂O₃ layer was deposited. On the other hand, when ALD process was conducted next to the QDs layer, the device performance was degraded because of shorten ligand for QDs. In order to prevent the degradation, the solution process for Al₂O₃ deposition should be conducted next to the QDs layer. Thus, maximum luminance was increased by 138% (from 15,844 cd/㎡ to 21,503 cd/㎡). The results show a suitable method of Al₂O₃ insulating layer deposition should be selected depending on device structures.