We demonstrate the efficient hole injection mechanism with gap state using vanadium oxide (V<sub>2</sub>O<sub>5</sub>) hole injection layer (HIL) for highperformance and inorganic quantum dots (QDs) light emitting diode (QLED)....
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https://www.riss.kr/link?id=A107287043
2020
-
500
학술저널
350-350(1쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
We demonstrate the efficient hole injection mechanism with gap state using vanadium oxide (V<sub>2</sub>O<sub>5</sub>) hole injection layer (HIL) for highperformance and inorganic quantum dots (QDs) light emitting diode (QLED)....
We demonstrate the efficient hole injection mechanism with gap state using vanadium oxide (V<sub>2</sub>O<sub>5</sub>) hole injection layer (HIL) for highperformance and inorganic quantum dots (QDs) light emitting diode (QLED). Effective hole injection characteristics were observed at the hole only device (HOD). Moreover, we investigated that the density of gap states was increased according to reduce the annealing temperature. Therefore, QLEDs with a low-temperature processable V<sub>2</sub>O<sub>5</sub> HIL was fabricated, and the device showed remarkable performances. The maximum luminance based on ITO electrode and IWO electrode device were measured as 56,717 cd/㎡ and 9,443.5 cd/㎡, respectively. The result demonstrates that the inorganic V<sub>2</sub>O<sub>5</sub> HIL is a promising alternative to organic HILs for state-of-the-art QLEDs.
압축 압력 및 흑연 조성에 따른 금속수소화물-흑연 성형체의 축 방향과 반지름 방향 열전도도 평가
한국수력원자력 KOLAS인정시험기관 전환평가 과정 소개
In silico method of endocrine-disrupting chemicals (EDCs) prediction in chemical space